sep. 2001 preliminary notice: this is not a final specification. some parametric limits are subject to change. pin configuration mitsubishi semiconductor m63820fp/kp 8-unit 500ma darlington transistor-array with clamp diode description the m63820fp/kp 8-channel sinkdriver, consists of 16 npn transistors connected to from eight high current gain driver pairs. features high breakdown voltage (bv ceo 50v) high-current driving (i c(max) = 500ma) with clamping diodes 3v micro computer series compatible input wide operating temperature range (ta = ?0 to +85 c) application output for 3 voltage microcomputer series and interface with high voltage system. relay and small printer driver, led, or incandescent display digit driver. function the m63820fp/kp is transistor-array of high active level eight units type which can do direct drive of 3 voltage micro- computer series. a resistor of 1.05k ? is connected between the input pin. a clamp diode for inductive load transient sup- pression is connected for the output pin (collector) and com pin (pin11). all emitters of the output transistor are con- nected to gnd (pin10). the outputs are capable of driving 500ma and are rated for operation with output voltage up to 50v. 1 2 3 4 5 6 7 8 9 10 20 19 18 17 16 15 14 13 12 11 nc in1 in2 in3 in4 in5 in6 in7 in8 gnd nc com common input output nc : no connection o1 o2 o3 o4 o5 o6 o7 o8 package type 20p2n-a(fp) 20p2e-a(kp) circuit diagram unit : ? com gnd 1.05k 3k 7.2k output input the eight circuits share the com and gnd the diode, indicated with the dotted line, is parasitic, and cannot be used. collector-emitter voltage collector current input voltage clamping diode forward current clamping diode reverse voltage power dissipation operating temperature storage temperature v ma v ma v w c c 0.5 ~ +50 500 0.5 ~ +10 500 50 1.10(gp)/0.68(kp) 40 ~ +85 55 ~ +125 ratings symbol parameter conditions unit absolute maximum ratings (unless otherwise noted, ta = ?0 ~ +85 c) output, h current per circuit output, l ta = 2 5 c, when mounted on board v ceo i c v i i f v r p d t opr t stg
sep. 2001 preliminary notice: this is not a final specification. some parametric limits are subject to change. mitsubishi semiconductor m63820fp/kp 8-unit 500ma darlington transistor-array with clamp diode i c 400ma duty cycle fp : no more than 4% kp : no more than 2% recommended operating conditions (unless otherwise noted, ta = 40 ~ +85 c) v parameter 0 limits min typ max symbol unit v o output voltage h input voltage l input voltage duty cycle fp : no more than 15% kp : no more than 6% collector current (current per 1 circuit when 8 circuits are coming on simultaneously) i c 0 0 2.7 0 50 400 200 10 0.6 ma v v v ih v il timing diagram note 1 test circuit ns ns 15 350 symbol unit parameter test conditions limits min typ max turn-on time turn-off time t on t off c l = 15pf (note 1) switching characteristics (unless otherwise noted, ta = 25 c) 1.2 1.0 0.9 1.5 1.4 2500 50 1000 v (br) ceo i i v f i r h fe v v ma v a 1.6 1.3 1.1 2.4 2.0 100 symbol unit parameter test conditions limits min typ max collector-emitter breakdown voltage input current clamping diode forward volltage clamping diode reverse current dc amplification factor i ceo = 100 a i i = 500 a, i c = 350ma i i = 350 a, i c = 200ma i i = 250 a, i c = 100ma v i = 3v i f = 350ma v r = 50v v ce = 2v, i c = 350ma v ce(sat) collector-emitter saturation voltage electrical characteristics (unless otherwise noted, ta = 25 c) input 50% 50% 50% 50% output ton toff pg input output v o r l open c l 50 ? (1)pulse generator (pg) characteristics : prr=1khz, tw = 10 s, tr = 6ns, tf = 6ns, zo = 50 ? v i = 0 ~ 3v (2)input-output conditions : r l = 25 ? , vo = 10v (3)electrostatic capacity c l includes floating capacitance at connections and input capacitance at probes measured device
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